Triode/MOS tube/transistor/module

This P-channel enhancement mode field effect transistor is produced using Fairchild's proprietary high cell density DMOS technology. This very high-density process minimizes on-resistance, provides rugged, reliable performance and fast switching. The NDS0605 can be used in most applications requiring up to 0.18A DC and can deliver up to 1 A of pulsed current with minimal effort. This product is especially suitable for low voltage applications requiring low current high side switches.

The FDMS7658AS is suitable for minimizing losses in power conversion applications. Simultaneously combined developments in silicon and encapsulation technology provide the lowest rDS(on) while maintaining excellent switching performance. This device also adds the advantage of a highly efficient monolithic Schottky body diode.

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