Triode/MOS tube/transistor/module

N-channel drain-source voltage (Vdss): 650V Continuous drain current (Id): 20A Power (Pd): 150W On-resistance (RDS(on)@Vgs,Id): 170mΩ@10V, 5.5A Threshold voltage (Vgs (th)@Id): 2V@250uA

N-channel, 700V, 6A, 1.6Ω@10V

This NPN bipolar transistor is suitable for general switching applications and features a SOT-23 surface mount encapsulation. This device is suitable for low power surface mount applications.

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

N-Channel, Logic Level, UltraFET Power MOSFET, 60V, 11A, 107mΩ