Triode/MOS tube/transistor/module

Power MOSFET, 60V, 155 mΩ, Single N-Channel, Logic Level, SOT?23

The device is designed for battery charging or load switching in cell phones and other ultra-portable applications. It provides MOSFETs with low on-state resistance.

Configuration Single Type P-Ch VDS(V) -40 VGS(V) 20 ID(A)Max. -20 VGS(th)(v) -2 RDS(ON)(m?)@4.422V 52 Qg(nC) @4.5V 20 QgS(nC) 2.5 Qgd(nC) 4.5 Ciss(pF) 840 Coss(pF) 92 Crss(pF) 60

PNP, Vceo=-65V, Ic=-0.1A, hfe=125~250, silk screen 3A

P-channel, VDSS withstand voltage 30V, ID current 50A, RDON on-resistance 15mR@VGS 10V(MAX), VGS(th) turn-on voltage 1-3V,

NPN, Vceo=50V, Ic=150mA, hfe=120~240

This N-channel MOSFET is produced using the advanced PowerTrench process. Combining developments in both silicon and Dual Cool encapsulation technology, it offers the lowest rDS(on) due to extremely low junction-to-ambient thermal resistance while maintaining excellent switching performance.

BC857A-F2-0000HF

N-channel, 500V, 5A, 1.7Ω@10V

NPN