Triode/MOS tube/transistor/module
NCE (Wuxi New Clean Energy)
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Potens (Bosheng Semiconductor)
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TOSHIBA (Toshiba)
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TF (Tuofeng)
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MOT (Renmao)
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Xiner (Core Energy Semiconductor)
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DIODES (US and Taiwan)
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WINSOK (Weishuo)
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Configuration Single Type P-Ch VDS(V) -60 VGS(V) 20 ID(A)Max. -2 VGS(th)(v) -1.9 RDS(ON)(m?)@4.111V 205 Qg(nC) @4.5V 6.3 QgS(nC) 2.3 Qgd(nC) 1.8 Ciss(pF) 364 Coss(pF) 41 Crss(pF) 12
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ROHM (Rohm)
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onsemi (Ansemi)
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This is a 20 V dual P-channel power MOSFET with ESD protection.
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HUAYI (Hua Yi Wei)
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GOFORD (valley peak)
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AGM-Semi (core control source)
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Type: One N-channel and one P-channel 30V/-30 23/-18A 11/23mΩ BLDC (brushless motor) recommended material
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onsemi (Ansemi)
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UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.
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VBsemi (Wei Bi)
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Convert Semiconductor
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APM (Jonway Microelectronics)
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Wuxi Unisplendour
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Wuxi Unisplendour
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