Triode/MOS tube/transistor/module

N-CH

NPN, Vceo=100V, Ic=4A

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 85A Power (Pd): 70W On-Resistance (RDS(on)@Vgs,Id): 2.8mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 24nC@10V Input capacitance (Ciss@Vds): 0.975nF@15V Operating temperature: -55℃~+150℃@(Tj ) DFN5*6encapsulation;

N tube, 30V, 80A

Field Effect Transistor (MOSFET) Type: P-channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 75A Power (Pd): 59.5W On-resistance (RDS(on)@Vgs,Id: 5.5mΩ @10V,15A Threshold Voltage (Vgs(th)@Id): 1.6@250uA Gate Charge (Qg@Vgs) 32nC@10V Input Capacitance (Ciss@Vds): 2.497nF@30V ,Vds=30v Id=75A Rds= 5.5mΩ, working temperature: -55℃~+150℃@(Tj)

Type: N-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 5.8A Power (Pd): 1.4W On-resistance (RDS(on)@Vgs,Id): 28mΩ@10V, 5.8A