Triode/MOS tube/transistor/module

Type N VDSS(V) 60 ID@TC=73?C(A) 0.115 PD@TC=73?C(W) 0.225 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.53V -

PNP, Vceo=-60V, Ic=-5A, hfe=120~270

P-channel, -30V, -5A, 0.042Ω@-10V

This P-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring low in-line power loss and fast switching.

P channel 30V 2.5A

Dual P-channel, 20V, 4A, 80mΩ@10V

Vceo base open circuit ≥ 25V: Ic safety current = 1.5A: voltage between VBE base level and emitter level ≤ 1.2V: Hfe current amplification factor: 100-300

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