Triode/MOS tube/transistor/module

N-channel, 30V, 24A, 2.6mΩ@10V

PNP, Vceo=-45V, Ic=-0.1A

This N-channel MOSFET is a rugged gate version of the advanced Power Trench process. It is optimized for high switching performance and very low RDS(ON).

NPN 400V/1.5A switching transistor.

N-channel, 60V, 17A, 11.4mΩ@10V

Configuration N+P Type P-Ch VDS(V) -40 VGS(V) 20 ID(A)Max. -24 VGS(th)(v) -2 RDS(ON)(m?)@4.256V 46 Qg( nC)@4.5V 9 QgS(nC) 2.54 Qgd(nC) 3.1 Ciss(pF) 1904 Coss(pF) 108 Crss(pF) 80

Field effect transistor (MOSFET) P-channel, VDSS withstand voltage 50V, ID current 130mA, RDON on-resistance 5R@VGS 10V(MAX), VGS(th) turn-on voltage 0.8-2.0V