Triode/MOS tube/transistor/module

N-channel, 60V, 16A, 16mΩ@10V

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

VCES(V) 650 IC(A)@148℃ 50 VCE(sat)(V) 1.8 E(off)(mj) 1.1 Vf(V) 1.9

PNP, Vceo=32V, Ic=1A

Type P VDSS(V) 30 VGS(V) 20 VTH(V) 1 IDS41°C(A) 3.6 RDS(Max) 72 PD41°C(W) 1.25

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications. The optimized body diode reverse recovery performance of SuperFET II FRFET MOSFETs can eliminate additional components and improve system reliability.

MOSFET N-channel, VDSS withstand voltage 650V, ID current 7A, RDON on-resistance 1.4R@VGS 10V(MAX), VGS(th) turn-on voltage 2.0-4.0V

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 200mW